BAW56DW Datasheet, PDF (1/2 Pages) Diodes Incorporated – QUAD SURFACE MOUNT SWITCHING DIODE ARRAY

RoHS
BAW56DW
WEJ ^{ELECTRONIC CO.,LTD BAW56DW SWITCHINGDIODE}
FEATURES
Power dissipation
P_D:
200 mW (Tamb=25℃)
Collector current
I_F:
150 mA
Collector-base voltage
V_R:
75 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-363
MAKING: KJC
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Junction capacitance
Reveres recovery time
Symbol
V(BR) R
IR
VF
Cj
trr
Test conditions
IR= 2.5µA
VR=75V
VR=20V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V, f=1MHz
IF=IR=10mA
Irr=0.1×IR
MIN
MAX
75
2.5
0.025
715
855
1000
1250
2
4
UNIT
V
µA
mV
pF
nS
RL=100Ω
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