BAV99W_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Switching Diode

RoHS
BAV99W
WEJ ^{ELECTRONIC CO.,LTD BAV99W SWITCHING DIODE}
FEATURES
Power dissipation
P_D : 200 mW Tamb=25
Collector current
I_F : 150 mA
Collector-base voltage
V_R : 75
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
Unit : mm
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
MAX
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
V(BR) R
IR
VF
CD
trr
IR= 100µA
VR=75V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V f=1MHz
IF=IR=10mA
Irr=0.1 IR
75
2.5
715
855
1000
1250
2
4
UNIT
V
µA
mV
pF
nS
RC=100
SHEN ZHEN YONG ER JIA ELECTRONIC CO.,LTD.
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