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| BAV99DW_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Switching Diode Array | |||
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RoHS
BAV99DW
WEJ ELECTRONIC CO.,LTD BAV99DW SWITCHINGDIODE
FEATURES
Power dissipation
PD:
200 mW (Tamb=25â)
Collector current
IF:
150 mA
Collector-base voltage
VR:
75 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
SOT-363
MAKING: KJG
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Symbol
V(BR) R
IR
VF
Test conditions
IR= 100µA
VR=75V
VR=20V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
MIN
MAX
75
2.5
0.025
715
855
1000
1250
UNIT
V
µA
mV
Junction capacitance
Cj
VR=0V, f=1MHz
2
pF
Reveres recovery time
IF=IR=10mA
trr
Irr=0.1ÃIR
RC=100â¦
4
nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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