BAV99 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

RoHS
SWITCHING DIODE
BAV99LT1
WEJ ELECTRONIC CO.,LTD Features
Power dissipation
P_D : 225 mW (Tamb=25 C)
Pluse Drain
IF : 215 mA
Reverse Voltage
VR : 70V
Operating and storage junction temperature range
T_j, T_stg : -55 C to +150 C
1
1.
2.4
1.3
SOT-23
3
2
ANODE-CATHODE
3
1
2
ANODE CATHODE
Marking:A7
Unit:mm
Electro-Optical Characteristics
Parameter
Symbol
Reverse breakdown voltage
V(BR)
Reverse Voltage leakage current
IR
Forward Voltage
VF
Diode Capacitance
CD
Reverse Recovery Time
trr
Test Condition
IR=100 A
VR=70V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V f=1MHz
IF=IR=10mA
VR=5V
RC=100
(Ta=25 C)
MIN. MAX. Unit
70
V
2.5
A
715
855
mV
1000
1250
1.5
pF
6
nS
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