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| BAV756DW_15 Datasheet, PDF (1/2 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – SWITCHING DIODE | |||
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RoHS
BAV756DW
WEJ ELECTRONIC CO.,LTD BAV756DW SWITCHINGDIODE
FEATURES
Power dissipation
PD : 200 mW (Tamb=25â)
Collector current
IF:
150 mA
Collector-base voltage
VR:
75
V
Operating and storage junction temperature range
TJ,Tstg: -55â to +150â
MARKING:KCA
SOT-363
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Junction capacitance
Reveres recovery time
Symbol
Test conditions
V(BR) R
IR
VF
Cj
trr
IR= 2.5µA
VR=75V
VR=20V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V f=1MHz
IF=IR=10mA
Irr=0.1Ð¥IR
RL=100â¦
MIN MAX
75
2.5
0.025
715
855
1000
1250
2
4
UNIT
V
µA
mV
pF
nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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