BAV70W_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – Dual Chips Common Cathode Surface Mount Switching Diode

RoHS
BAV70W
WEJ ELECTRONIC CO.,LTD BAV70W SWITCHING DIODE
FEATURES
Power dissipation
P_D : 200 mW Tamb=25
Collector current
I_O: 150 mA
Collector-base voltage
V_R : 75 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
Unit : mm
Marking KJA
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
MAX
Reverse breakdown voltage
V(BR)
IR= 100µA
75
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
IR
VR=75V
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
CD
VR=0V f=1MHz
IF=IR=10mA
trr
Irr=0.1 IR
2.5
715
855
1000
1250
2
4
UNIT
V
µA
mV
pF
nS
RL=100
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