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| BAV70LT1_15 Datasheet, PDF (1/2 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – SWITCHING DIODE | |||
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RoHS
BAV70LT1
SOT-23 Plastic-Encapsulate Diodes
WEJ ELECTRONIC CO.,LTD BAV70LT1 SWITCHINGDIODE
FEATURES
Power dissipation
PD:
225 mW(Tamb=25â)
Forward Current
IF:
Reverse Voltage
200 mA
VR:
70 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +15â
1
1.
2.4
1.3
SOT-23
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
Marking A4
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
IR
Test conditions
IR= 100µA
VR=70V
MIN
MAX
70
2.5
Forward voltage
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
715
855
1000
1250
UNIT
V
µA
mV
Diode capacitance
CD
VR=0V,f=1MHz
1.5
pF
Reverse recovery time
IF=IR=10mA
t rr
IR=1mA ,VR=5V
RC=100â¦
6
nS
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:wej@yongerjia.com
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