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BAT54X_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Schottky Barrier Diode
RoHS
BAT54X
BAT54X Schottky barrier Diodes
FEATURES
Extremely Fast Switching Speed
Low forward voltage – 0.35 V (Typ) @ IF= 10 mAdc
MARKING: JV
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
WEJ ELECTRONIC Parameter
Symbol
DC reverse voltage
VR
Forward current
IF
Repetitive peak forward current
IFRM
Non-repetitive peak forward current (t=1us)
IFSM
Total Device Dissipation
PD
Thermal Resistance Junction to Ambient
Junction temperature
RθJA
Tj
Storage temperature
Tstg
Limits
30
200
300
600
200
635
150
150
Electrical Ratings @TA=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Symbol Min.
V(BR)R
30
VF1
VF2
VF3
VF4
VF5
Typ.
0.22
0.41
0.52
0.29
0.35
Max.
0.24
0.5
0.8
0.32
0.40
Unit
V
CO.,LTD 1.20
0.30
0.80
1.60
0.10
0.65
SOD-523
Unit
V
mA
mA
mA
mW
℃/W
℃
℃
Conditions
IR=10uA
IF=0.1mA
IF=30mA
IF=100mA
IF=1.0mA
IF=10mA
Reverse Recovery Time
trr
5
ns
IF=IR=10mAdc,IR(REC)=1mAdc
Reverse current
IR
0.5
2.0
μA
VR=25V
Total Capacitance
CT
7.6
10
pF
VR=1V,f=1MHZ
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