BAT48 Datasheet, PDF (1/4 Pages) General Semiconductor – Schottky Diodes

RoHS
BAT48
Schottky Barrier Diode _{TD Features}
.,L ^{1. High reliability}
2. Very low forward voltage
3. Small surface mounting type
CO _Applications
Applications where a very low forward voltage
IC _{is required}
ON _{Absolute Maximum Ratings}
R _Tj=25
Parameter
T _{Repetitive peak reverse voltage}
Forward continuous current
C _{Repetitive peak forward current}
Surge forward current
E _{Power dissipation}
L _{Maximum junction temperature}
Ambient operating temperature range
E _{Storage temperature range}
Test Conditions
T_amb=25
T_amb=25 , t_p 1 s
t_p 10ms, T_amb=25
T_amb=65
Symbol
V_RRM
I_F
I_FRM
I_FSM
P_tot
T_j
T_A
T_stg
Value
40
350
1
7.5
330
125
-65~+125
-65~+150
J _{Maximum Thermal Resistance}
ETj=25
Parameter
WJunction ambient
Test Conditions
on PC board 50mm 50mm 1.6mm
Symbol
R_thJA
Value
300
Unit
V
mA
A
A
mW
Unit
/W
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