BAS70W-04 Datasheet, PDF (1/3 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – SCHOTTKY DIODE

RoHS
BAS70W-04/05/06
WEJ ^{ELECTRONIC CO.,LTD BAS70W SERIES SCHOTTKY DIODE}
FEATURES
Power dissipation
P_D : 200 mW Tamb=25
Collector current
I_F : 70 mA
Collector-base voltage
V_R : 70
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
Unit : mm
BAS70W Marking: K73 BAS70W-04 Marking: K74
BAS70W-05 Marking: K75
BAS70W-06 Marking: K76
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
Test conditions
MIN
V(BR) R
IR= 10µA
70
IR
VR=50V
VF
IF=1mA
IF=15mA
CD
VR=0V f=1MHz
IF=10mA through IR=10mA
trr
to IR=1mA
MAX
100
410
1000
2
5
UNIT
V
nA
mV
pF
nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]