BAS40WS Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY DIODE

RoHS
BAS40WS
WEJ ELECTRONIC CO.,LTD · LowTurn-onVoltage
· Fast Switching
· PN Junction Guard Ring for Transient and
ESD Protection
SOD-323
1.70
2.65
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Power Dissipation (Note 1)
Forward Surge Current (Note 1)
@ t < 1.0s
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VRRM
V_RWM
VR
I_FM
P_d
I_FSM
R_qJA
T_j
T_STG
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Symbol Min Typ
V_(BR)R
40
—
V_F
—
—
I_R
—
20
C_j
—
4.0
t_rr
—
—
BAS40w s
40
200
350
600
357
-55 to +125
-65 to +150
Unit
V
mA
mW
mA
°C/W
°C
°C
Max
—
380
1000
200
5.0
5.0
Unit
V
mV
nA
pF
ns
Test Condition
I_R= 10mA
tp < 300ms, IF = 1.0mA
t_p < 300ms, I_F = 40mA
t_p < 300ms, V_R = 30V
V_R = 0V, f =1.0MHz
I_F = I_R = 10mA to I_R = 1.0mA,
R_L = 100W
Notes: 1. Valid Provided that terminals are kept at ambient temperature.
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