BAS40W-04 Datasheet, PDF (1/3 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – SCHOTTKY DIODE

RoHS
BAS40W-04/05/06
WEJ ELECTRONIC CO.,LTD BAS40W SERIES SCHOTTKY DIODE
FEATURES
Power dissipation
P_D : 200 mW Tamb=25
Collector current
I_F: 200 mA
Collector-base voltage
V_R: 40V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
1.BASE
2.EMITTER
3.COLLECTOR
Unit : mm
BAS40W Marking:43.K43 BAS40W-04 Marking:44.K44 BAS40W-05 Marking:45.K45 BAS40W-06 Marking:46.K46
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
Test conditions
MIN
V(BR) R
IR= 10µA
40
IR
VR=30V
VF
IF=1mA
IF=40mA
CD
VR=0V f=1MHz
IF=10mA through IR=10mA
trr
to IR=1mA
MAX
200
380
1000
5
5
UNIT
V
nA
mV
pF
nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]