BAS40 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes

SCHOTTKY DIODE
RoHS
BAS40LT1
WEJ ^{ELECTRONIC CO.,LTD Features}
Power dissipation
P_D : 200 mW (Tamb=25 C)
Pluse Drain
IF : 200 mA
Reverse Voltage
VR : 40V
Operating and storage junction temperature range
T_j, T_stg : -55 C to +150 C
-
+
+
BAS40 Marking:43
-
+
-
BAS40-04 Marking:44
+
+
+
BAS40-05 Marking:45
-
-
BAS40-06 Marking:46
1
1.
2.4
1.3
SOT-23
3
2
Unit:mm
Electro-Optical Characteristics
Parameter
Symbol
Reverse breakdown voltage
V(BR)
Test Condition
IR=100 A
(Ta=25 C)
MIN. MAX. Unit
40
V
Reverse Voltage leakage current
IR
VR=30V
Forward Voltage
VF
IF=100mA
IF=200mA
Diode Capacitance
CD
VR=0V f=1MHz
Reverse Recovery Time
trr
IF=10mA though IR=10mA
to IR=1mA
100
A
380
1000
mV
5
pF
5
nS
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