BAS19 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose diodes

SWITCHING DIODE
RoHS
BAS19LT1
WEJ ELECTRONIC CO.,LTD Features
Power dissipation
P_D : 225 mW (Tamb=25 C)
Pluse Drain
IF : 200 mA
Reverse Voltage
VR : 120V
Operating and storage junction temperature range
T_j, T_stg : -55 C to +150 C
1
1.
2.4
1.3
SOT-23
3
2
1.BASE
2.EMITTER
3.COLLECTOR
ANODE-CATHODE
3
1
2
ANODE CATHODE
Marking:JP
Unit:mm
Electro-Optical Characteristics
Parameter
Symbol
Reverse breakdown voltage
V(BR)
Reverse Voltage leakage current
IR
Forward Voltage
VF
Diode Capacitance
CD
Reverse Recovery Time
trr
Test Condition
IR=100 A
VR=100V
IF=100mA
IF=200mA
VR=0V f=1MHz
(Ta=25 C)
MIN. MAX. Unit
120
V
0.1
A
1000
1250
mV
5
pF
50
nS
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