BAS16X Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Swithching Diode

RoHS
BAS16X
1.20
BAS16X Swithching Diode
FEATURES
High-Speed Switching Applications
D _{Lead Finish: 100% Matte Sn ( Tin )}
T _{Qualified Reflow Temperature: 260 ℃}
Extremely Small SOD-523 Package
SOD-523
0.30
0.80
1.60
0.10
0.65
.,L _{MARKING: A6}
Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃
O _Parameter
C _{DC reverse voltage}
Forward current
IC _{Pak forward surge current}
Total Device Dissipation
N _{Thermal Resistance Junction to Ambient}
O _{Junction and storage temperature}
Symbol
V_R
I_F
I_FM(surge)
P_D
Rθ_JA
T_j ,T_stg
Limits
75
200
500
150
635
150
R _{Electrical Ratings @TA=25℃}
T _Parameter
Reverse breakdown voltage
LEC _{Forward voltage}
E _{Reverse recovery Time}
WEJ ^{Reverse current}
Symbol Min.
V_(BR)R
75
V_F1
V_F2
V_F3
V_F4
t_rr
I_R1
I_R2
I_R3
Typ.
Max.
715
815
1000
1250
6.0
1.0
50
30
Unit
mV
ns
μA
SOD-523
Unit
V
mA
mA
mW
℃/W
℃
Conditions
I_R=100uA
I_F=1mA
I_F=10mA
I_F=50mA
I_F=150mA
I_F=I_R=10mAdc,R_L=50Ω
V_R=75V
V_R=75V,T_j=150℃
V_R=75V,T_j=150℃
Forward recovery voltage
V_FR
1.75
V
I_F=10mA, t_r= 20ns
Diode Capacitance
C_D
2.0
pF
V_R=0V,f=1MHZ
Stored charge
Q_S
45
pC
I_F=10mA, V_R=5.0V ,R_L=500Ω
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