BAS16T Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diode

RoHS
BAS16T/BAW56T/BAV70T/BAV99T
WEJ ELECTRONIC CO.,LTD BAS16T/BAW56T/BAV70T/BAV99T
SWITCHING DIODE
FEATURES
Power dissipation
P_D:
150 mW (Tamb=25℃)
Forward Current
I_F:
Reverse Voltage
75 m A
V_R:
85 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
1.60
1.00
0.20
1.60
0.30
0.50
0.81
SOT-523
BAS16T Marking: A2 BAW56T Marking: JD
BAV70T Marking: JJ
BAV99T Marking: JE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Symbol
V(BR)
IR1
IR2
VF
Test conditions
IR= 100µA
VR=75V
VR=25V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
MIN
MAX
85
2
0.03
715
855
1000
1250
UNIT
V
µA
µA
mV
Diode capacitance
CD
VR=0V, f=1MHz
1.5
pF
Reverse recovery time
t rr
4
nS
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