BAS16 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Small Signal Diode

RoHS
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY_BC_AO_S., L₁T₆D
SOT-23 Plastic-Encapsulate DIODE
BAS16 SWITCHING DIODE
SOT-23
FEATURES
z Fast Switching Speed
z For General Purpose Switching Applications
z High Conductance
Marking: A6
Maximum Ratings @T_A=25℃
Parameter
Non-Repetitive Peak reverse voltage
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak forward surge current @=1.0μs
@=1.0s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
P_D
R_θJA
T_j
T_STG
Limits
100
75
53
300
150
2.0
1.0
225
556
150
-55~+150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
Test conditions
MIN
V_{(BR) R}
I_R= 100µA
75
I_R
V_R=75V
I_F=1mA
V_F
I_F=10mA
I_F=50mA
I_F=150mA
C_D
V_R=0, f=1MHz
I_F=I_R=10mA,I_rr=0.1×I_R,
t_rr
R_L=100Ω
Unit
V
V
V
mA
mA
A
mW
℃/W
℃
℃
MAX
1
0.715
0.855
1
1.25
2
6
UNIT
V
µA
V
pF
nS
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