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| BAS116LT1_15 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – SURFACE MOUNT SWITCHING DIODE | |||
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RoHS
BAS116LT1
SURFACE MOUNT SWITCHING DIODE
WEJ ELECTRONIC CO.,LTD ⢠Low Leakage Current Applications
⢠Medium Speed Switching Times
Package:SOT-23
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Non-Repetitive Peak Reverse
VRM
100
Voltage
Peak Repetitive Reverse Voltage VRRM
working Peak Reverse Voltage VRWM
75
DC Blocking Voltage
VR
Peak Forward Current
IF
200
Forward
Continuous
IFM
300
Current(Note)
Power Dissipation (Note)
PD
300
Derate Above 25
2.4
Junction Temperature
Tj
150
Storage Temperature
Tstg
-50-150
Note:Diode Ceramic Substrate 10mm 8.0mm 0.7mm
Unit
V
V
mAdc
mAdc
mW
mW/
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Max Unit Test Conditions
Forward Voltage
0.9
V IF=1.0mA
1.0
V IF=10mA
VF
1.1
V IF=50mA
1.25 V IF=150mA
Reverse Breakdown Voltage
V (BR)
75
â Vdc I BR = 100 uAdc
Reverse Voltage Leakage Current
Capacitance
5.0
IR
80
Cj
2.0
Reverse Recovery Time
Trr
3.0
Note:Diode On Ceramic Substrate 10mm 8.0mm 0.7mm
DEVICE MARKING:
BAS116LT1=JV
uA VR=75V
nA VR=75V Tj=150
PF VR=0 f=1.0MHz
uS IF=10mA to IR=10mA
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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