BA282 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Silicon Planar Diodes

RoHS
BA282/BA283
Band switching diode _{TD Features}
.,L ^{1. Low differential forward resistance}
2. Low diode capacitance
3. High reverse impedance
O _Applications
Band switching in VHF-tuners
C _Construction
IC _{Silicon epitaxial planar}
N _{Absolute Maximum Ratings}
O T_j=25
Parameter
R _{Reverse voltage}
Forward current
T _{Junction temperature}
Storage temperature range
Test Conditions
EC _{Maximum Thermal Resistance}
L Tj=25
Parameter
WEJ ^{E Junction ambient}
Test Conditions
I=4mm, T_L=constant
Symbol
Value
Unit
V_R
35
V
I_F
100
mA
T_j
150
T_stg
-55…+150
Symbol
R_thJA
Value
350
Unit
K/W
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