B772 Datasheet, PDF (1/1 Pages) Diode Semiconductor Korea – PNP Silicon Epitaxial Planar Transistor

RoHS
B772
B772 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
500 mW (Tamb=25℃)
.,L ^{Collector current}
I_CM:
Collector-base voltage
-3 A
O _V(BR)CBO:
-40 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLETOR
3. EMITTER
1
2
3
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
CLASSIFICATION OF h_FE(1)
N _Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic=-100µA , IE=0
-40
O _{Collector-emitter breakdown voltage}
V(BR)CEO
IC= -10 mA , IB=0
-30
R _{Emitter-base breakdown voltage}
V(BR)EBO
IE= -100 µA, IC=0
-6
T _{Collector cut-off current}
ICBO
VCB= -40 V, IE=0
C _{Collector cut-off current}
ICEO
VCE=-30 V, IB=0
E _{Emitter cut-off current}
IEBO
VEB=-6V, IC=0
L _{DC current gain}
hFE(1)
hFE(2)
VCE= -2V, IC= -1A
60
VCE=-2V, IC= -100mA
32
E _{Collector-emitter saturation voltage}
VCE(sat)
IC=-2A, IB= -0.2A
J _{Base-emitter saturation voltage}
WE^{Transition frequency}
VBE(sat)
IC=-2A, IB= -0.2A
VCE= -5V, C=-0.1A
fT
50
f = 10MHz
MAX
-1
-10
-1
400
-0.5
-1.5
UNIT
V
V
V
µA
µA
µA
V
V
MHz
CLASSIFICATION OF hFE₍₁₎
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
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