B5819W Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

RoHS
B5819W
WEJ ^{ELECTRONIC CO.,LTD B5819W SCHOTTKY BARRIER DIODE}
FEATURES
Power dissipation
P_D : 450 mW Tamb=25
Collector current
I_F: 1 A
Collector-base voltage
V_R: 40 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
MARKING SL
Unit mm
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
V(BR)
IR
VF
CD
IR= 1mA
VR=40V
VR=4V
VR=6V
IF=0.1A
IF=1A
IF=3A
VR=4V f=1MHz
40
V
1
0.05
0.075
0.45
0.6
V
0.9
120
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]