B5817W Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

RoHS
B5817W
WEJ ELECTRONIC CO.,LTD B5817W SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
P_D : 450 mW Tamb=25
Collector current
I_F: 1 A
Collector-base voltage
V_R: 20 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
MARKING SJ
Unit mm
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
Test conditions
V(BR)
IR
VF
CD
IR= 1mA
VR=20V
IF=1A
IF=3A
VR=4V
f=1MHz
MIN
MAX
UNIT
20
V
1
0.45
V
0.75
120
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