8550SS Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

RoHS
8550SS
WEJ ELECTRONIC CO.,LTD 8550SS TRANSISTOR (PNP)
FEATURES
Power dissipation
TO-92
P_CM:
Collector current
1
W (Tamb=25℃)
1. EMITTER
I_CM:
-1.5
A
Collector-base voltage
V_(BR)CBO:
- 40
V
Operating and storage junction temperature range
2. COLLECTOR
3. BASE
123
T_J, T_stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= -100µA , IE=0
-40
Collector-emitter breakdown voltage V(BR)CEO
IC= -0.1mA , IB=0
-25
Emitter-base breakdown voltage
V(BR)EBO
IE= -100µA, IC=0
-6
Collector cut-off current
ICBO
VCB= -40V, IE=0
-0.1
Collector cut-off current
ICEO
VCE= -20V, IE=0
-0.1
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
DC current gain
hFE (1)
VCE= -1V, IC=-100 mA
85
300
hFE(2)
VCE=-1V , IC=-800 mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=-800 m, IB=-80 mA
-0.5
Base-emitter saturation voltage
VBE(sat) IC=-800mA, IB=-80 mA
-1.2
Transition frequency
VCE=-10V, IC=-50mA
fT
100
f =30 MHz
UNIT
V
V
V
µA
µA
ΜA
V
V
MHz
CLASSIFICATION OF h_FE(1)
Rank
B
C
D
Range
85-160
120-200
160-300
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]