8050S Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

RoHS
8050S
8050S TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
0.625 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
Collector-base voltage
0.5 A
O _V(BR)CBO:
40 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
Symbol
Test conditions
MIN
TYP
N _{Collector-base breakdown voltage}
V(BR)CBO
Ic= 100µA , IE=0
40
O _{Collector-emitter breakdown voltage}
V(BR)CEO
Ic= 1 mA, IB=0
25
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
5
R _{Collector cut-off current}
ICBO
VCB= 40V, IE=0
T _{Collector cut-off current}
ICEO
VCE= 20V, IB=0
C _{Emitter cut-off current}
IEBO
VEB= 3V, IC=0
LE ^{DC current gain}
hFE(1)
hFE(2)
VCE= 1V, IC= 50mA
85
VCE= 1V, IC= 500mA
50
E _{Collector-emitter saturation voltage}
VCE(sat)
IC=500mA, IB=50 mA
Base-emitter saturation voltage
VBE(sat)
IC=500mA, IB=50 mA
MAX
0.1
0.1
0.1
300
0.6
1.2
UNIT
V
V
V
µA
µA
µA
V
V
EJ _{Transition frequency}
W^{CLASSIFICATION OF hFE(1)}
VCE= 6 V, IC=20mA
fT
150
f =30MHz
MHz
Rank
B
C
D
Range
85-160
120-200
160-300
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