2SD999_15 Datasheet, PDF (1/2 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – NPN TRANSISTOR

RoHS
2SD999
2SD999 TRANSISTOR (NPN)
WEJ ELECTRONIC CO.,LTD FEATURES
Power dissipation
P_CM:
0.5 W (Tamb=25℃)
Collector current
I_CM:
1A
Collector-base voltage
V_(BR)CBO:
30 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE (sat)
VBE
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=1V, IC=1A
IC=1A, IB=100mA
IC=1A, IB=100mA
VCE=6V, IC=10mA
VCE=6V, IC=10mA
VCB=6V, IE=0, f=1MHz
MIN TYP MAX UNIT
30
V
25
V
5
V
0.1 µA
0.1 µA
90
400
50
0.4 V
1.2 V
0.6
0.7 V
130
MHz
22
pF
CLASSIFICATION OF h_FE(1)
Rank
CM
CL
CK
Range
90-180
135-270
200-400
Marking
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]