2SD886 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

RoHS
2SD886
2SD886 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
1 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
Collector-base voltage
3A
O _V(BR)CBO:
50 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-126C
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter saturation voltage}
E _{Transition frequency}
WEJ ^{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=5mA, IB=0
IE=100µA, IC=0
VCB=50V, IE=0
VEB=3V, IC=0
VCE=2V, IC=20mA
VCE=2V, IC=1A
IC=2A, IB=200mA
IC=2A, IB=200mA
VCE=5V, IC=100mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
50
V
50
V
5
V
1
µA
1
µA
100
100
400
0.5 V
2
V
80
MHz
45
pF
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]