2SD880 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,60V,30W)

RoHS
2SD880
2SD880 _D TRANSISTOR (NPN)
TO—220
T FEATURES
Power dissipation
.,L ^PCM:
1.5 W (Tamb=25℃)
1. BASE
2. COLLECTOR
3. EMITTER
Collector current
O _ICM:
3A
Collector-base voltage
C _V(BR)CBO:
60 V
Operating and storage junction temperature range
123
T_J, T_stg: -55℃ to +150℃
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
Symbol
Test conditions
MIN TYP
N _{Collector-base breakdown voltage}
V(BR)CBO
Ic=100µA, IE=0
60
Collector-emitter breakdown voltage
V(BR)CEO
Ic=50mA, IB=0
60
O _{Emitter-base breakdown voltage}
V(BR)EBO
IE= 100µA, IC=0
7
R _{Collector cut-off current}
ICBO
VCB=60V, IE=0
T _{Emitter cut-off current}
IEBO
VEB=7V, IC=0
C _{DC current gain}
hFE
VCE=5V, IC=500mA
60
Collector-emitter saturation voltage
VCE (sat)
IC=3A, IB=300mA
E _{Base-emitter saturation voltage}
VBE
IC=0.5A, VCE= 5V
L _{Transition Frequency}
fT
VCE=5 V, IC=500mA
3
E _{Collector output capacitance}
C_ob
VCE=10V, IE=0, f=1MHz
70
J _{Turn on time}
Storage time
WE^{Fall time}
ton
0.8
IB1=-IB2=0.2A, IC=2A
ts
1.5
VCC=30V, PW=20µs
tf
0.8
MAX
100
100
300
1
1
UNIT
V
V
V
µA
µA
V
V
MHz
pF
µs
µs
µs
CLASSIFICATION OF h_FE
Rank
O
Y
GR
Range
60-120
100-200
150-300
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