2SD874 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification)

RoHS
2SD874
2SD874 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
500 mW (Tamb=25℃)
.,L ^{Collector current}
I_CM:
Collector-base voltage
1A
O _V(BR)CBO:
30 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter saturation voltage}
E _{Transition frequency}
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=10µA, IE=0
Ic=2mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VEB=4V, IC=0
VCE=10V, IC=500mA
VCE=5V, IC=1A
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=10V, IC=50mA, f=200MHz
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
30
V
25
V
5
V
0.1 µA
0.1 µA
85
340
50
0.4 V
1.2 V
200
MHz
20
pF
E_{CLASSIFICATION OF hFE(1)}
W^Rank
Q
R
S
Range
85-170
120-240
170-340
Marking
ZQ
ZR
ZS
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