2SD789 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

RoHS
2SD789
2SD789 TRANSISTOR (NPN)
FEATURE
D _{Power dissipation}
T _PCM:
0.9 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
1A
Collector-base voltage
V_(BR)CBO:
100 V
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -55℃ to +150℃}
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
IC _Parameter
N _{Collector-base breakdown voltage}
Collector-emitter breakdown voltage
O _{Emitter-base breakdown voltage}
R _{Collector cut-off current}
T _{Emitter cut-off current}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic= 10µA , IE=0
IC=1mA , IB=0
IE= 10µA, IC=0
VCB= 80V, IE=0
VEB=6V, IC=0
MIN
MAX
100
50
6
1
0.2
C _{DC current gain}
hFE
VCE=2V, IC= 100mA
100
800
E _{Collector-emitter saturation voltage}
VCEsat
IC= 1A, IB=100mA
0.3
L _{Transition frequency}
fT
VCE=2V, IC= 10mA
80
E _{Output capacitance}
C_ob
VCE=10V, IE=0,f=1 MHz
30
UNIT
V
V
V
µA
µA
V
MHz
pF
EJ _{CLASSIFICATION OF hFE}
W^Rank
B
C
D
E
Range
100-200
160-320
250-500
400-800
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