2SD780 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

RoHS
2SD780/2SD780A
SOT-23-3L
2SD780/2SD780A D FEATURES
Power dissipation
TRANSISTOR (NPN)
1. BASE
2. EMITTER
3. COLLECTOR
T _PCM:
0.2 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
0.3 A
Collector-base voltage
O _V(BR)CBO:
V_(BR)CBO:
60 V 2SD780
80 V 2SD780A
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
Symbol
Test conditions
MIN
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
V(BR)CBO
V(BR)CEO
Ic=0.1mA, IE=0
Ic=1mAIB=0
2SD780 60
2SD780A 80
2SD780 60
2SD780A 80
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA, IC=0
5
R _{Collector cut-off current}
ICBO
VCB=50V, IE=0
T _{Emitter cut-off current}
IEBO
VEB=5V, IC=0
EC ^{DC current gain}
hFE(1)
hFE(2)
VCE=1V, IC=50mA
110
VCE=2V, IC=300mA
30
L _{Collector-emitter saturation voltage}
VCE(sat)
IC=300mA, IB=30mA
Base-emitter voltage
E _{Transition frequency}
J _{Collector output capacitance}
VBE
VCE=6V, IC=10mA
0.6
fT
VCE=6V, IC=10mA
Cob
VCB=6V, IE=0, f=1MHz
2. 80¡ À0. 05
1. 60¡ À0. 05
TYP MAX UNIT
V
V
V
0.1 µA
0.1 µA
400
0.6 V
0.7 V
140
MHz
7
pF
E_{CLASSIFICATION OF hFE(1)}
W ^Rank
Range
110-180
135-220
170-270
200-320
250-400
Marking
2SD780
2SD780A
DW1
D51
DW2
D52
DW3
D53
DW4
D54
DW5
D55
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