2SD669A Datasheet, PDF (1/2 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – TRANSISTOR (NPN)

RoHS
2SD669A
2SD669A TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
1 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
1.5 A
Collector-base voltage
O _V(BR)CBO:
180
V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-126C
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
E _{Transition frequency}
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=1mA, IE=0
Ic=10mA, IB=0
IE=1mA, IC=0
VCB=160V, IE=0
VEB=4V, IC=0
VCE=5V, IC=150mA
VCE=5V, IC=500mA
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
180
V
160
V
5
V
10 µA
10 µA
60
200
30
1
V
1.5 V
140
MHz
14
pF
E_{CLASSIFICATION OF hFE(1)}
W^Rank
B
C
Range
60-120
100-200
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