2SD602LT1_15 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – NPN EPITAXIAL SILICON TRANSISTOR

RoHS
2SD602LT1
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
WEJ ELECTRONIC CO.,LTD * Complement to MMBT2907ALT1
* Collector Dissipation: Pc(max)=225mW
* Collector-Emitter Voltage :Vceo= 40V
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Vcbo
75
V
Collector-Emitter Voltage
Vceo
40
V
Emitter-Base Voltage
Vebo
6
V
Collector Current
Ic
600
mA
Collector Dissipation Ta=25 *
P_D
225
mW
Junction Temperature
Tj
150
Storage Temperature
Tstg -55-150
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Voltage BVcbo 75
Collector-Emitter
Breakdown BVceo 40
Voltage#
Emitter-Base Breakdown Voltage
BVebo 6
Emitter Cutoff Current
Icex
10
Collect Cutoff Current
Icbo
10
Collect Cutoff Current
Icbo
10
1.
2.4
1.3
1 . G AT E
2 .SO UR C E R
3.DRAIE
Unit:mm
Unit Test Conditions
V Ic= 10uA Ie=0
V Ic= 10mA Ib=0
V Ie= 10uA Ic=0
nA Vce= 60V Veb=3V
nA Vcb= 60V Ie=0
nA Vcb= 60VIe=0 Ta=125
Collect Cutoff Current
Iebo
10
DC Current Gain
Hfe1 35
DC Current Gain
Hfe2 50
DC Current Gain
Hfe3 75
DC Current Gain
Hfe4 100
300
DC Current Gain
Hfe5 40
Collector-Emitter Saturation Voltage Vce(sat)
0.3
Collector-Emitter Saturation Voltage Vce(sat)
1
Base-Emitter Saturation Voltage
Vbe(sat) 0.6
1.2
Base-Emitter Saturation Voltage
Vbe(sat)
2
Output Base Capacitance
Cob
8
Current Gain-Bandwidth Product
f_T
300
* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
nA Vcb=3V Ic=0
Vce= 10V Ic= 0.1mA
Vce= 10V Ic= 1mA
Vce= 10V Ic= 10mA
Vce= 10V Ic= 150mA
Vce= 10V Ic= 500mA
V Ic= 150mA Ib= 15mA
V Ic= 500mA Ib= 50mA
V Ic=150mA Ib= 15mA
V Ic= 500mA Ib= 50mA
PF Vcb=10V Ie=0 f=1MHz
MHz Vce= 20V Ic= 20mA
f=100MHz
# Pulse Test : Pulse Width 300uS,Duty cycle 2%
DEVICE MARKING: 2SD602LT1=1P
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]