2SD601LT1 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – NPN EPITAXIAL SILICON TRANSISTOR

RoHS
2SD601LT1
NPN EPITAXIAL SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD PRE-AMPLIFIER,LOW LEVEL&LOW NOISE
* Complement to S9015LT1
* Collector Current: Ic= 100mA
* Collector-Emitter Voltage:Vce= 45V
* High Total Power Dissipation:Pc=225mW
* High Hfe And Good Linearity
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Collector-Base Voltage
Vcbo
50
Collector-Emitter Voltage
Vceo
45
Emitter-Base Voltage
Vebo
5
Collector Current
Ic
100
Collector Dissipation Ta=25 *
P_D
225
Junction Temperature
Tj
150
Storage Temperature
Tstg -55-150
Unit
V
V
V
mA
mW
1.
2.4
1.3
1 . G AT E
2 .SO U RC E R
3.DRAIE
U nit :m m
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Voltage BVcbo 50
Collector-Emitter
Breakdown BVceo 45
Voltage#
Emitter-Base Breakdown Voltage
BVebo 5
Collector-Base Cutoff Current
Icbo
50
Emitter-Base Cutoff Current
Iebo
50
DC Current Gain
Hfe 135 270 1000
Collector-Emitter Saturation Voltage Vce(sat)
0.3
Base-Emitter Saturation Voltage
Vbe(sat)
1.00
Base-Emitter on Voltage
Vbe(on) 0.58 0.63 o.7
Output Capacitance
Cob
2.2 3.5
Current Gain-Bandwidth Product
f_T
150 270
Noise Figure
NF
10
* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
# Pulse Test : Pulse Width 300uS,Duty cycle 2%
DEVICE MARKING:
2SD601LT1=L5
Unit
V
V
V
nA
nA
V
V
V
PF
MHz
dB
Test Conditions
Ic=100uA Ie=0
Ic= 1mA Ib=0
Ie= 100uA Ic=0
Vcb= 50V Ie=0
Veb= 5V Ic= 0
Vce= 5V Ic= 1mA
Ic= 100mA Ib= 5mA
Ic= 100mA Ib= 5mA
Vce= 5V Ic= 2mA
Vcb= 10V Ie=0 f=1MHz
Vce= 5V Ic= 10mA
Vce= 5V Ic= 0.2mA
f=1KHz Rs=2Kohm
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