2SD596_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

RoHS
2SD596
2SD596 TRANSISTOR (NPN)
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
0.2 W (Tamb=25℃)
Collector current
I_CM:
0.7 A
O _{Collector-base voltage}
V_(BR)CBO:
30 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
E _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter voltage}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)*
hFE(2)*
VCE(sat) *
VBE(on) *
Test conditions
Ic=100µA, IE=0
Ic= 1 mA, IB=0
IE= 100µA, IC=0
VCB=30 V , IE=0
VEB= 5V , IC=0
VCE= 1V, IC= 100mA
VCE=1V, IC= 700mA
IC=700 mA, IB= 70mA
VCE=6V, IC=10mA
MIN
30
25
5
110
50
0.6
TYP
J _{Transition frequency}
fT
VCE= 6V, IC= 10mA
140
MAX UNIT
V
V
V
0.1 µA
0.1 µA
400
0.6
V
0.7
V
MHz
WE^{* Pulse test : Pulse width ≤350µs, Duty Cycle≤2%.}
CLASSIFICATION OF hFE₍₁₎
Marking
DV1
Range
110-180
DV2
135-220
DV3
170-270
DV4
200-320
DV5
250-400
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]