2SD468 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

RoHS
2SD468
2SD468 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
0.9 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
1A
Collector-base voltage
O _V(BR)CBO:
25 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
Transition frequency
E _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=10µA, IE=0
Ic=1mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VEB=4V, IC=0
VCE=2V, IC=500mA
IC=800mA, IB=80mA
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
25
V
20
V
5
V
1
µA
1
µA
85
240
0.5 V
1
V
190
MHz
22
pF
J _{CLASSIFICATION OF hFE(1)}
E_Rank
W^Range
B
85-170
C
120-240
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