2SD313 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,60V,30W)

RoHS
2SD313
2SD313 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
1.75 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
Collector-base voltage
3A
O _V(BR)CBO:
60 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Collector cut-off current}
C _{Emitter cut-off current}
E _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter voltage}
J _{Transition frequency}
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=60V, IE=0
VCE=60V, IE=0
VEB=4V, IC=0
VCE=2V, IC=1A
VCE=2V, IC=0.1A
IC=2A, IB=200mA
VCE=2V, IC=1A
VCE=5V, IC=500mA
VCB=10V, IE=0,f=1MHz
MIN TYP MAX UNIT
60
V
60
V
5
V
100 µA
1
mA
100 µA
40
320
40
1
V
1.5 V
8
MHz
65
pF
WE^{CLASSIFICATION OF hFE(1)}
Rank
C
D
E
F
Range
40-80
60-120
100-200
160-320
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