2SD2908_15 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – NPN TRANSISTOR

RoHS
2SD2908
2SD2908 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
0.5 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
5A
Collector-base voltage
O _V(BR)CBO:
50 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
Collector-emitter breakdown voltage
O _{Emitter-base breakdown voltage}
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
Collector-emitter saturation voltage
E _{Transition frequency}
L _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=50µA, IE=0
Ic=1mA, IB=0
IE=50µA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
VCE=2V, IC=0.5A
IC=4A, IB=100mA
VCE=6V, IC=50mA, f=100MHz
VCB=20V, IE=0, f=1MHz
MIN TYP MAX UNIT
50
V
20
V
6
V
0.5 µA
0.5 µA
120
390
1
V
150
MHz
30
pF
E _{CLASSIFICATION OF hFE(1)}
J _Rank
E_Range
W^Marking
Q
120-270
AHQ
R
180-390
AHR
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