2SD2583 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS

RoHS
2SD2583
2SD2583 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
1 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
5A
Collector-base voltage
O _V(BR)CBO:
30 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
LE _{Collector-emitter saturation voltage}
VCE(sat)
E _{Base-emitter saturation voltage}
J _{Transition frequency}
WE^{Collector output capacitance}
VBE(sat)
fT
Cob
Test conditions
Ic=0.1mA, IE=0
Ic=1mA, IB=0
IE=0.1mA, IC=0
VCB=30V, IE=0
VEB=6V, IC=0
VCE=2V, IC=1A
VCE=2V, IC=4A
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=4A, IB=200mA
IC=2A, IB=100mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
30
V
30
V
6
V
0.1 µA
0.1 µA
150
600
50
0.15
0.25 V
0.5
1.5 V
120
MHz
77
pF
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