2SD2136 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

RoHS
2SD2136
2SD2136 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
1.25 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
Collector-base voltage
3A
O _V(BR)CBO:
60 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
E _{Transition frequency}
J _{Turn-on time}
Switch Time
Storage time
WE ^{Fall time}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
ton
tstg
tf
Test conditions
Ic=1mA, IE=0
Ic=30mA, IB=0
IE=1mA, IC=0
VCB=60V, IE=0
VEB=6V, IC=0
VCE=4V, IC=1A
VCE=4V, IC=3A
IC=3A, IB=375mA
VCE=4V, IC=3A
VCE=5V, IC=0.1A, f=200MHz
IC=1A, IB1=0.1A, IB2=-0.1A
MIN TYP MAX UNIT
60
V
60
V
6
V
200 µA
1
mA
40
250
10
1.2 V
1.8 V
30
MHz
0.5
µs
2.5
µs
0.4
µs
CLASSIFICATION OF h_FE(1)
Rank
P
Q
R
Range
40-90
70-150
120-250
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