2SD2118 Datasheet, PDF (1/2 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

RoHS
2SD2118
2SD2118 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
1 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
5A
Collector-base voltage
O _V(BR)CBO:
50 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-252-2
1. BASE
2. 30¡ À0. 10
6. 50¡ À0. 15
5. 30¡ À0. 10
0. 51¡ À0. 05
2. 30¡ À0. 10
1. 20
0. 51¡ À0. 10
0¡ «0. 10
5¡ ã
5¡ ã
5¡ ã
0. 80¡ À0. 10
0. 60¡ À0. 10
2. 30¡ À0. 10
0¡¡ ã9«¡ ã
0. 51
2. COLLECTOR
3. EMITTER
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
Transition frequency
L _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=50µA, IE=0
Ic=1mA, IB=0
IE=50µA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
VCE=2V, IC=500mA
IC=4A, IB=100mA
VCE=6V, IC=50mA, f=100MHz
VCB=20V, IE=0, f=1MHz
MIN TYP MAX UNIT
50
V
20
V
6
V
0.5 µA
0.5 µA
120
390
1
V
150
MHz
30
pF
E _{CLASSIFICATION OF hFE(1)}
J _Rank
E_Range
W^Marking
Q
120-270
R
180-390
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