2SD1898 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor (80V, 1A)

RoHS
2SD1898
2SD1898 TRANSISTOR (NPN)
SOT-89
FEATURES
z High VCEO
z High IC
z Good hFE linearity
z Low VCE (sat)
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
100
80
5
1
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
Test conditions
V_(BR)CBO I_C=50μA, I_E=0
V_(BR)CEO I_C=1mA, I_B=0
V_(BR)EBO I_E=50μA, I_C=0
I_CBO
V_CB=80V, I_E=0
I_EBO
V_EB=4V, I_C=0
h_FE
V_CE=3V, I_C=0.5A
V_CE(sat) I_C=500mA, I_B=20mA
f_T
V_CE=10V, I_C=50mA, f=100MHz
Cob V_CB=10V,I_E=0,f=1MHz
MIN TYP MAX UNIT
100
V
80
V
5
V
1
μA
1
μA
82
390
0.4
V
100
MHz
20
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
P
82-180
Q
120-270
DF
R
180-390
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