2SD1802 Datasheet, PDF (1/2 Pages) Weitron Technology – NPN PLASTIC ENCAPSULATE TRANSISTORS

RoHS
2SD1802
6. 5 0¡ À0. 10
2 . 30¡ À0. 05
2SD1802 TRANSISTOR (NPN)
FEATURES
Power dissipation
D _PCM:
1 W (Tamb=25℃)
T _{Collector current}
.,L ^ICM:
3A
Collector-base voltage
V_(BR)CBO: 60 V
Operating and storage junction temperature range
O _{TJ, Tstg: -55℃ to +150℃}
TO-251
TO-252-2
5. 3 0¡ À0. 05
0. 5 1¡ À0 . 03
5¡ ã
0. 80¡ À0. 0 5
0. 6 0¡ À0. 0 5
5¡ ã
5¡ ã
1. BASE
2. 3 0¡ À0. 05
2. 3 0¡ À0. 0 5
1 . 20
0. 51 ¡ À0 . 03
2. COLLECTOR
123
3. EMITTER
6. 50¡ À0. 15
5. 30¡ 0À. 10
0. 51¡ À0. 05
1. 20
0. 51¡ À0. 10
0¡ 0«. 10
5¡ ã
2. 30¡ À0. 10
5¡ ã
5¡ ã
2. 30¡ 0À. 10
0. 80¡ 0À. 10
0. 60¡ 0À. 10
2. 30¡ À0. 10
0¡¡ ã9«¡ ã
0. 51
C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
IC ^Parameter
Collector-base breakdown voltage
N _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
O _{Collector cut-off current}
R _{Emitter cut-off current}
T _{DC current gain}
C _{Collector-emitter saturation voltage}
E _{Base-emitter saturation voltage}
L _{Transition frequency}
E _{Collector output capacitance}
J _{Turn-off time}
Fall time
E_{Storage time}
WCLASSIFICATION OF hFE(1)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
ton
tf
ts
Test conditions
Ic=10µAµ, IE=0
Ic=1mA, IB=0
IE=10µA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=100mA
VCE=2V, IC=3A
IC=2A, IB=100mA
IC=2A, IB=100mA
VCE=10V, IC=50mA
VCB=10V, IE=0,f=1MHz
Vcc=25V, Ic=1A
IB1=-IB2=0.1A
MIN TYP MAX UNIT
60
V
50
V
6
V
1
µA
1
µA
100
560
35
0.5 V
1.2 V
150
MHz
25
pF
70
650
nS
35
Rank
R
S
T
U
Range
100-200
140-280
200-400
280-560
Marking
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