2SD1781K Datasheet, PDF (1/1 Pages) Rohm – Medium Power Transistor (32V, 0.8A)

RoHS
2SD1781K
2SD1781K TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
.,L ^{Collector current}
200 mW (Tamb=25℃)
I_CM℃
0.8 A
O _{Collector-base voltage}
V_(BR)CBO:
40 V
C _{Operating and storage junction temperature range}
T_J T_stg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
DC current gain
E _{Collector-emitter saturation voltage}
L _{Transition frequency}
E _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=50µA, IE=0
Ic=1mA, IB=0
IE=50µA, IC=0
VCB=20V, IE=0
VEB=4V, IC=0
VCE=3V, IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
40
V
32
V
5
V
0.5 µA
0.5 µA
120
390
0.4 V
150
MHz
10
pF
J _{CLASSIFICATION OF hFE(1)}
E_Rank
W^Range
Q
120-270
R
180-390
Marking
AFQ
AFR
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