2SD1758 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

RoHS
2SD1758
WEJ ^{ELECTRONIC CO.,LTD 2SD1758 TRANSISTOR(PNP)}
TO-252-2
FEATURES
Power dissipation
P_CM:
2
W (Tamb=25℃)
Collector current
I_CM:
2
A
Collector-base voltage
V_(BR)CBO:
40
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
1. BASE
2. COLLECTOR
3. EMITTER
1 23
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic=50µA , IE=0
40
Collector-emitter breakdown voltage V(BR)CEO
IC=1mA, IB=0
32
Emitter-base breakdown voltage
V(BR)EBO
IE=50µA, IC=0
5
Collector cut-off current
ICBO
VCB=-20V , IE=0
Emitter cut-off current
IEBO
VEB=4V , IC=0
DC current gain
hFE
VCE= 3V , IC=500mA
82
Collector-emitter saturation voltage VCE(sat)
IC=2A, IB=0.2A
Transition frequency
fT
VCE= 5V, IE= 50mA,f=100MHz 80
TYP
MAX UNIT
V
V
V
1
µA
1
µA
390
0.8
V
MHz
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