2SD1664_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

RoHS
2SD1664
2SD1664 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
0.5 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
1A
Collector-base voltage
O _V(BR)CBO:
40 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
Transition frequency
L _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=50µA, IE=0
Ic=1mA, IB=0
IE=50µA, IC=0
VCB=20V, IE=0
VEB=4V, IC=0
VCE=3V, IC=0.1A
IC=500mA, IB=50mA
VCE=5V, IC=50mA , f=1MHz
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
40
V
32
V
5
V
0.5 µA
0.5 µA
82
390
0.4 V
150
MHz
15
pF
J ^E _{CLASSIFICATION OF hFE(1)}
E_Rank
WRange
P
82-180
Q
120-270
R
180-390
Marking
DAP
DAQ
DAR
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]