2SD1616A Datasheet, PDF (1/1 Pages) Micro Electronics – NPN SILICON TRANSISTOR

RoHS
2SD1616A
2SD1616A TRANSISTOR (NPN)
TO-92
FEATURE
D _{Power dissipation}
T _PCM:
0.75 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
Collector-base voltage
1A
V_(BR)CBO:
120 V
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -55℃ to +150℃}
1. EMITTER
2. COLLECTOR
3. BSAE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
IC _Parameter
Collector-base breakdown voltage
N _{Collector-emitter breakdown voltage}
O _{Emitter-base breakdown voltage}
R Collector cut-off current
Emitter cut-off current
T _{DC current gain}
EC _{Collector-emitter saturation voltage *}
Base-emitter saturation voltage *
L _{Base-emitter voltage *}
E _{Transition frequency}
Output capacitance
J _{Turn on time}
E_{Storage time}
W^{Fall time}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE
fT
Cob
ton
tS
tF
Test conditions
Ic= 10µA , IE=0
IC= 2 mA , IB=0
IE= 10µA, IC=0
VCB=60V, IE=0
VEB=6V, IC=0
VCE=2 V, IC= 100mA
VCE=2 V, IC= 1A
IC= 1A, IB=50mA
IC= 1A, IB=50mA
VCE= 2V, IC=50mA
VCE=2 V, IC= 100mA
IE= 0, f=1MHz
Vcc=10V, IC=100mA,
IB1=-IB2=10mA
VBE (OFF)=-2~ -3V
MIN
MAX
UNIT
120
V
60
V
6
V
0.1
µA
0.1
µA
135
600
81
0.3
V
1.2
V
0.7
V
100
MHz
25
pF
0.07 typ ms
0.95 typ ms
0.07 typ ms
*pulse test: PW≤350µS, δ≤2%.
CLASSIFICATION OF h_FE1
Rank
L
K
U
Range
135-270
200-400
300-600
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