2SD1616 Datasheet, PDF (1/1 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR

RoHS
2SD1616
2SD1616 TRANSISTOR (NPN)
TO-92
FEATURE
D _{Power dissipation}
T _PCM:
0.75 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
1A
Collector-base voltage
V_(BR)CBO:
60 V
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -55℃ to +150℃}
1. EMITTER
2. COLLECTOR
3. BSAE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
IC _Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic= 10µA , IE=0
60
N _{Collector-emitter breakdown voltage V(BR)CEO}
IC= 2 mA , IB=0
50
O _{Emitter-base breakdown voltage}
V(BR)EBO
IE= 10µA, IC=0
6
R Collector cut-off current
ICBO
VCB= 60V, IE=0
Emitter cut-off current
IEBO
VEB=6 V, IC=0
CT ^{DC current gain}
hFE1
VCE=2 V, IC= 100mA
135
hFE2
VCE=2 V, IC= 1A
81
E _{Collector-emitter saturation voltage *}
VCE(sat)
IC= 1A, IB=50mA
Base-emitter saturation voltage *
VBE(sat)
IC= 1A, IB=50mA
L _{Base-emitter voltage *}
VBE
VCE= 2V, IC=50mA
E _{Transition frequency}
fT
VCE=2 V, IC= 100mA
100
Output capacitance
Cob
VCE=10V,IE= 0, f=1MHz
J _{Turn on time}
E_{Storage time}
W^{Fall time}
ton
Vcc=10V,IC=100mA,IB1=-IB2=
tS
10Ma
Vbe(off)=-2~ -3V
tF
MAX
0.1
0.1
600
UNIT
V
V
V
µA
µA
0.3
1.2
0.7
25
0.07 typ
0.95 typ
0.07 typ
V
V
V
MHz
pF
ms
ms
ms
*pulse test: PW≤350µS, δ≤2%.
CLASSIFICATION OF h_FE1
Rank
Y
G
L
Range
135-270
200-400
300-600
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