2SC945LT1_15 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – NPN EPITAXIAL SILICON TRANSISTOR

RoHS
2SC945LT1
NPN EPITAXIAL SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD * Collector Current: Ic= 150mA
* Collector-Emitter Voltage:Vce= 50V
* High Total Power Dissipation:Pc=225mW
* High Hfe And Good Linearity
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Collector-Base Voltage
Vcbo
60
Collector-Emitter Voltage
Vceo
50
Collector Current
Ic
150
Collector Dissipation Ta=25 *
P_D
225
Junction Temperature
Tj
150
Storage Temperature
Tstg -55-150
Unit
V
V
mA
mW
1.
2.4
1.3
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Voltage BVcbo 60
Collector-Emitter
Breakdown BVceo 50
Voltage#
Collector-Base Cutoff Current
Icbo
100
DC Current Gain
Hfe
70
700
Collector-Emitter Saturation Voltage Vce(sat)
0.3
Output Capacitance
Cob
2.2 3.5
Current Gain-Bandwidth Product
f_T
150
* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
# Pulse Test : Pulse Width 300uS,Duty cycle 2%
DEVICE MARKING:
2SC945LT1=HF
Unit
V
V
nA
V
PF
MHz
Test Conditions
Ic=100uA Ie=0
Ic= 1mA Ib=0
Vcb= 60V Ie=0
Vce= 6V Ic= 1mA
Ic= 100mA Ib= 10mA
Vcb= 10V Ie=0 f=1MHz
Vce= 5V Ic= 10mA
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]