2SC536 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TRANSISTOR (NPN)

RoHS
2SC536
2SC536 TRANSISTOR (NPN)
FEATURES
D _{Power dissipation}
T _PCM:
400 mW (Tamb=25℃)
.,L ^{Collector current}
I_CM:
100 mA
Collector-base voltage
V_(BR)CBO:
40 V
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
IC _Parameter
Collector-base breakdown voltage
N _{Collector-emitter breakdown voltage}
O _{Emitter-Base breakdown voltage}
R _{Collector cut-off current}
T _{Emitter cut-off current}
DC current gain
C _{Collector-emitter saturation voltage}
E _{Transition frequency}
L _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=35V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=6V, f=1MHz
MIN
TYP
40
30
5
60
100
3.5
MAX
UNIT
V
V
V
1
µA
1
µA
960
0.5
V
MHz
pF
E _{CLASSIFICATION OF hFE}
Rank
D
WEJ ^Range
60-120
E
100-200
F
160-320
G
280-560
H
480-960
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]