2SC4738_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

RoHS
2SC4738
2SC4738 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
0.1 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
0.15 A
Collector-base voltage
O _V(BR)CBO:
60 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-523
1. BASE
2. EMITTER
3. COLLECTOR
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
Transition frequency
L _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2mA
IC=100mA, IB=10mA
VCE=10V, IC=1mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
60
V
50
V
5
V
0.1 µA
0.1 µA
120
700
0.25 V
80
MHz
3.5 pF
J ^E _{CLASSIFICATION OF hFE(1)}
Rank
E_Range
WMarking
Y
120-240
LY
GR
200-400
LG
BL
350-700
LL
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